We report an investigation of temperature- and doping-dependentthermoelectric behaviors of topological semimetal Cd3As2. The electricalconductivity, thermal conductivity, Seebeck coefficient, and figure of merit(ZT) are calculated by using Boltzmann transport theory. The calculatedthermoelectric properties of the pristine Cd3As2 match well the experimentalresults. The electron or hole doping, especially the latter, is found improvingmuch the thermoelectric behaviors of the material. The optimum merit ZT ofCd3As2 with electron doping is found to be about 0.5 at T=700 K with n=1x1020cm-3, much larger than the maximum experimental value obtained for the pristineCd3As2 (~0.15). For the p-type Cd3As2, the maximal value of the Seebeckcoefficient as a function of temperature increases apparently with the increaseof the hole doping concentration and its position shifts drastically towardsthe lower temperature region compared to that of the n-type Cd3As2, leading tothe optimum merit ZT of about 0.5 obtained at low temperature of 500K (p=1x1020cm-3) in the p-type Cd3As2.
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